WaveEtchTM wet processing performance
Typical process data show that the WaveEtch™ successfully thins difficult films, such as silicon oxide, with a process uniformity standard deviation as low as 1%!

Figure 1 shows a surface topographic map that illustrates the high degree of uniformity that can be achieved while thinning approximately 1000 Angstoms off of oxide films with a WaveEtch™ system. See anaylsis below for a summary of system performance.

Figure 1
Thickness of Silicon Oxide Film on 75mm Wafer

Statistical Analysis

4238 Å
24 Å 4284 Å 4204 Å 80 Å

The system averages approximately 2% standard deviation of etched depth over the area of each wafer, and maintains less than 5% standard deviation of target etch depth from wafer-to-wafer, when processing SiO2 films.

In conclusion, for your most demanding etching and thinning applications contact Materials and Technologies today for a discussion of your process needs and an introduction to the WaveEtch™ systems.