Silicon Oxide Film
Pattern Etching
Thinning

WaveEtch™ wet processing performance
Our latest data show that the WaveEtch™ system is the ideal tool for thinning nitride films, as it achieves process uniformities under 1%. During the removal of 800 Å of plasma nitride, the WaveEtch™ yields a film thickness standard deviation of 0.7%! This performance offers cost, quality, and yield benefits in the production of your latest devices. In addition, it allows for the introduction of advanced process steps due to its true single-sided capabilities.

Figure 1
Thickness of Silicon Nitride Film on 75mm Wafer

Statistical Analysis

MEAN
STDEV
MAX
MIN
RANGE

2248 Å
16 Å

2276 Å 2220 Å 56 Å

Figure 1 shows a surface topographic map that illustrates the high degree of uniformity that can be achieved while thinning nitride films with a WaveEtch™ system. See analysis to the left for a summary of system performance.

Contact MATECH™ now to increase your wet processing quality and yield!
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